, relicensing from LGPL to MIT in the process. The original author, a2mark
2026年3月6日，北京，第十四届全国人民代表大会第四次会议上海市代表团全体会议，现场宣传册。（摄影：蔡星卓）
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Storing Data: To write data, a high voltage (around 15-20V) is applied to the control gate above the floating gate. This causes electrons from the transistor’s channel (the substrate) to “tunnel” through the thin oxide barrier via a quantum mechanical process called Fowler-Nordheim tunneling. The electrons get trapped in the floating gate, creating a negative charge. The presence and amount of this charge shift the cell’s threshold voltage—the voltage needed to turn the transistor on during a read operation.
memory safety violation